Effects of Cell Aspect Ratio and Applied Pulse Parameters on Resistance Drift in Ge2Sb2Te5 PCM Nanodevices
Published in 2024 IEEE Nanotechnology Materials and Devices Conference (NMDC), 2024
This paper investigates how variations in cell geometry and electrical pulse characteristics affect resistance drift in phase change memory (PCM) nanodevices using Ge2Sb2Te5. Simulation results provide insights into improving device reliability and performance.
Recommended citation: Tasneem Mazhar, Sadid Muneer, Nafisa Noor. (2024). "Effects of Cell Aspect Ratio and Applied Pulse Parameters on Resistance Drift in Ge2Sb2Te5 PCM Nanodevices." 2024 IEEE Nanotechnology Materials and Devices Conference (NMDC), pp. 157-161.
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