Tasneem Mazhar

Tasneem Mazhar

he/him

Actively seeking research opportunities in semiconductor devices, memory technologies, and computational modeling.

Effects of Cell Aspect Ratio and Applied Pulse Parameters on Resistance Drift in Ge2Sb2Te5 PCM Nanodevices

Published in 2024 IEEE Nanotechnology Materials and Devices Conference (NMDC), 2024

In this paper, we studied the resistance drift behavior of phase change memory (PCM) nanodevices made of Ge2Sb2Te5 (GST-225). By varying the cell’s aspect ratio and the parameters of the applied electrical pulses, we observed distinct changes in resistance evolution. Using finite element simulations, we identified how these factors impact thermal distribution, phase stability, and ultimately device reliability. Our findings offer design and operational guidelines to enhance PCM performance and are expected to contribute toward more robust non-volatile memory solutions.

Recommended citation: Tasneem Mazhar, Sadid Muneer, Nafisa Noor. (2024). "Effects of Cell Aspect Ratio and Applied Pulse Parameters on Resistance Drift in Ge2Sb2Te5 PCM Nanodevices." 2024 IEEE Nanotechnology Materials and Devices Conference (NMDC), pp. 157-161.
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