Effects of Cell Aspect Ratio and Applied Pulse Parameters on Resistance Drift in Ge2Sb2Te5 PCM Nanodevices
Tasneem Mazhar, Sadid Muneer, Nafisa Noor. (2024). "Effects of Cell Aspect Ratio and Applied Pulse Parameters on Resistance Drift in Ge2Sb2Te5 PCM Nanodevices." 2024 IEEE Nanotechnology Materials and Devices Conference (NMDC), pp. 157-161.